| PART |
Description |
Maker |
| HYB18T1G160AC-3.7 HYB18T1G160AC-5 HYB18T1G400AC-3. |
DDR2 SDRAM Components - 1Gb (64Mx16) DDR2 533 (4-4-4); Available 3Q04
DDR2 SDRAM Components - 1Gb (64Mx16) DDR2 400 (3-3-3); Available 3Q04
DDR2 SDRAM Components - 1Gb (256Mx4) DDR2 533 (4-4-4); Available 3Q04
DDR2 SDRAM Components - 1Gb (256Mx4) DDR2 400 (3-3-3); Available 3Q04
DDR2 SDRAM Components - 1Gb (128Mx8) DDR2 533 (4-4-4); Available 3Q04
DDR2 SDRAM Components - 1Gb (128Mx8) DDR2 400 (3-3-3); Available 3Q04
|
Infineon
|
| VL-MM8-1EBN |
1GB 128Mx64 DDR2 SDRAM NON-ECC UNBUFFERED SODIMM 200-PIN
|
List of Unclassifed Manufacturers
|
| SHB100VGGA |
2 DDR2 DIMM support up to 4 GB memory
|
Axiomtek Co., Ltd.
|
| 1747407-4 |
DDR1 DDR2 SODIMM SOCKET 0.6MM PITCH 200POS 8MM HEIGHT STANDARD TYPE (LATCH DIRECT SOLDERING TYPE)
|
Tyco Electronics
|
| 1473149-1 1473149-4 |
DDR1 & DDR2 SODIMM SOCKET 0.6mm PITCH 200POS STANDARD PROFILE STANDARD TYPE (NEW LATCH TYPE)
|
Tyco Electronics
|
| HMT451S6MMP8C-G7 HMT451S6MMP8C-S6 HMT451S6MMR8C-G7 |
204pin DDR3 SDRAM SODIMM
512M X 64 DDR DRAM MODULE, DMA204 LEAD FREE, SODIMM-204
|
Hynix Semiconductor, Inc.
|
| HYMP564S648-E3 HYMP564S648-C4 HYMP532S646-E3 HYMP5 |
200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver.
DDR2 SDRAM - SO DIMM 256MB
DDR2 SDRAM - SO DIMM 512MB
DDR2 SDRAM - SO DIMM 1GB
|
HYNIX[Hynix Semiconductor]
|
| M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554B |
40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯64位非ECC
64M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| HYS72T512420EFA |
240-Pin Fully-Buffered DDR2 SDRAM Modules DDR2 SDRAM RoHS Compliant Products 240针全缓冲DDR2内存模组DDR2 SDRAM的符合RoHS产品
|
Qimonda AG
|
| EMK23H2H-27.665M |
OSCILLATORS 50PPM -40 85 3.3V 4 27.665MHZ TS HCMOS 3.2X5 4PAD SMD CRYSTAL OSCILLATOR, CLOCK, 27.665 MHz, LVCMOS OUTPUT
|
Ecliptek, Corp.
|
| EMK32G2J-27.665M |
OSCILLATORS 100PPM -40 85 2.5V 4 27.665MHZ PD HCMOS 2.5X3.2 4PAD SMD CRYSTAL OSCILLATOR, CLOCK, 27.665 MHz, LVCMOS OUTPUT
|
Ecliptek, Corp.
|
